Dr. Xiangbo (Henry) Meng
Department of Mechanical Engineering
University of Arkansas
Atomic and molecular layer deposition (ALD & MLD) are two powerful vapor-phase thin-film techniques. In the past decade, they have been attracting more and more attention. ALD and MLD share a similar growth mechanism relying on self-limiting gas-solid surface reactions. They both are operated with repeatable cycles to proceed film growth. Ascribed to their unique mechanism, ALD and MLD were born with a series of unrivaled capabilities, such as extremely uniform and conformal coatings over any substrates of any shapes, low growth temperature (typically = 200 oC and even down to room temperature), and accurate growth controllability at the atomic and molecular level. Due to their different adoptions of precursors, ALD is exclusively for growing inorganic materials while MLD is specially for organic compounds. Consequently, they and their combination potentially can develop any materials from inorganics to organics and inorganic-organic hybrids, which are in existence and not in existence. Therefore, they have been providing us with new solutions in many applications, ranging from semiconductors to catalysis, new energies, biomedical, and surface engineering. In this talk, Dr. Meng will give an introduction on the basic principles of ALD and MLD, their historic development, and emerging applications.